? semiconductor components industries, llc, 2014 july, 2014 ? rev. p0 1 publication order number: nvgs3130n/d nvgs3130n product preview power mosfet 20 v, 5.9 a, single n?channel, tsop?6 features ? leading edge trench technology for low on resistance ? low gate charge for fast switching ? small size (3 x 2.75 mm) tsop?6 package ? aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr?free and are rohs compliant applications ? dc?dc converters ? lithium ion battery applications ? load/power switching maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source v oltage v dss 20 v gate?to?source v oltage v gs 8 v continuous drain curren t (note 1) steady state t a = 25 c i d 5.9 a t a = 85 c 4.6 t 10 s t a = 25 c 6.6 power dissipation (note 1) steady state t a = 25 c p d 1.4 w t 10 s 1.7 continuous drain curren t (note 2) steady state t a = 25 c i d 4.4 a t a = 85 c 3.4 power dissipation (note 2) t a = 25 c p d 0.8 w pulsed drain current t p 10 s i dm 24 a operating and storage temperature range t j , t stg ?55 to 175 c source current (body diode) i s 1.1 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 1) r ja 110 c/w junction?to?ambient ? t 10 s (note 1) 90 junction?to?ambient ? steady state (note 2) 200 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 2. surface?mounted on fr4 board using the minimum recommended pad size this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 1256 3 n?channel 4 drain gate source device package shipping ? ordering information NVGS3130NT1G tsop?6 (pb?free) 3000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 20 v 24 m @ 4.5 v r ds(on) max 5.9 a i d max v (br)dss http://onsemi.com tsop?6 case 318g style 1 marking diagram & pin assignment 1 vs9 m vs9 = specific device code m = date code* = pb?free package source 4 drain 6 drain 5 3 gate 1 drain 2 drain (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 32 m @ 2.5 v 5.2 a
nvgs3130n http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v; i d = 250 a 20 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 9.8 mv/ c zero gate voltage drain current i dss v gs = 0 v; v ds = 16 v, t j = 25 c 1.0 a gate?to?source leakage current i gss v ds = 0, v gs = 8 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds, i d = 250 a 0.4 0.6 1.4 v negative temperature coefficient v gs(th) /t j 3.4 mv/ c drain?to?source on?resistance r ds(on) v gs = 4.5 v, i d = 5.6 a 19 24 m v gs = 2.5 v, i d = 4.9 a 25 32 forward transconductance g fs v ds = 10 v, i d = 5.6 a 8.2 s charges, capacitance, & gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 16 v 935 pf output capacitance c oss 169 reverse transfer capacitance c rss 104 input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 10 v 965 output capacitance c oss 198 reverse transfer capacitance c rss 110 total gate charge q g(tot) v gs = 4.5 v v ds = 16 v i d = 5.6 a 13.2 20.3 nc threshold gate charge q g(th) 0.60 gate?to?source charge q gs 1.5 gate?to?drain charge q gd 4.2 total gate charge q g(tot) v gs = 4.5 v v ds = 5.0 v i d = 6.2 a 11.8 18.0 threshold gate charge q g(th) 0.6 gate?to?source charge q gs 1.4 gate?to?drain charge q gd 2.7 switching characteristics, v gs = 4.5 v (note 4) turn?on delay time t d(on) v gs = 4.5 v, v dd = 16 v, i d = 1 a, r g = 3 6.3 12.6 ns rise time t r 7.3 13.5 turn?off delay time t d(off) 21.7 35.1 fall time t f 9.7 17.6 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1.0 a t j = 25 c 0.7 1.2 v reverse recovery time t rr v gs = 0 vdc, di sd /dt = 100 a/ s, i s = 1.0 a 20.4 ns charge time t a 8.1 discharge time t b 11.6 reverse recovery charge q rr 8.8 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperature.
nvgs3130n http://onsemi.com 3 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 6 5.5 2.5 2 1.5 1 0.5 0 0 4 8 12 20 2.0 1.75 1.5 1.25 1.0 0.75 0 5 10 15 25 figure 3. on?resistance vs. gate?to?source voltage figure 4. on?resistance vs. drain current and gate voltage v gs , gate voltage (v) i d , drain current (a) 3 2.5 2 1.5 1 0 0.02 0.04 0.06 0.08 0.10 14 12 10 8 6 4 2 0.00 0.02 0.04 0.06 0.08 0.10 figure 5. on?resistance variation with temperature figure 6. capacitance variation t j , junction temperature ( c) 125 100 75 50 25 0 ?25 ?50 0.70 0.80 0.90 1.00 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) 4.5 4 3.5 35 v gs = 4.5 v to 2.5 v 1.5 v 1.8 v t j = 25 c t j = 25 c t j = 125 c t j = ?55 c v ds 5 v 5 4.5 4 3.5 i d = 5.6 a t j = 25 c v gs = 2.5 v v gs = 4.5 v r ds(on) , drain?to?source resistance (normalized) 150 v gs = 4.5 v i d = 5.6 a drain?to?source voltage (v) 20 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 c, capacitance (pf) 18 16 14 c iss c oss c rss v gs = 0 v t j = 25 c f = 1 mhz t j = 125 c t j = 25 c 20 18 16 v gs = 2 v v gs = 1.8 v 3 v 16 2.0 v 20 0.5 2.25 1.10 1.20 1.30 1.40 1.50 1.60 1.70 175
nvgs3130n http://onsemi.com 4 typical characteristics figure 7. gate?to?source and drain?to?source voltage vs. total charge figure 8. diode forward voltage vs. current figure 9. maximum rated forward biased safe operating area v sd , source?to?drain voltage (v) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 10 i s , source current (a) 1.0 v gs = 0 v 25 c 125 c t j = ?55 c v gs , gate-to-source voltage (v) q g , total gate charge (nc) i d = 5.6 a t j = 25 c v gs q gs q gd qt v ds , drain-to-source voltage (v) v ds 0.1 1 100 v ds , drain?to?source voltage (v) 1 100 r ds(on) limit thermal limit package limit 10 10 v gs = 8 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 0.1 0.01 i d , drain current (a) figure 10. single pulse maximum power dissipation single pulse time (s) 1000 10 0 0 1 5 power (w) single pulse r ja = 110 c/w t a = 25 c 0 1 2 4 5 3 6 14 12 10 8 6 4 2 0 v ds = 16 v v ds = 5 v 0 2 4 8 10 6 12 14 16 18 0.2 100 1 2 3 4 figure 11. thermal response t, time (s) 1 0.001 single pulse 100 1000 10 0.1 0.001 0.0001 0.000001 0.01 0.1 1 0.01 0.00001 r ja , effective transient thermal resistance normalized 0.2 0.02 d = 0.5 0.05 0.01 0.1
nvgs3130n http://onsemi.com 5 package dimensions tsop?6 case 318g?02 issue v style 1: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 23 4 5 6 d 1 e b e1 a1 a 0.05 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimensions d and e1 are determined at datum h. 5. pin one indicator must be located in the indicated zone. c *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max millimeters 0.90 1.00 1.10 a1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 d 2.90 3.00 3.10 e 2.50 2.75 3.00 e 0.85 0.95 1.05 l 0.20 0.40 0.60 0.25 bsc l2 ? 0 1 0 1.30 1.50 1.70 e1 e recommended note 5 l c m h l2 seating plane gauge plane detail z detail z 0.60 6x 3.20 0.95 6x 0.95 pitch dimensions: millimeters m p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nvgs3130n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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